Investigation of Compact Power Amplifier Cells at THz Frequencies using InGaAs mHEMT Technology-Reference-Cited by-同舟云学术

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Investigation of Compact Power Amplifier Cells at THz Frequencies using InGaAs mHEMT Technology

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

John Laurenz¹,Tessmann Axel¹,Leuther Arnulf¹,Neininger Philipp¹,Zwick Thomas²

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, 79108, Germany

2. Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Karlsruhe, 76131, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8697340/8700641/08701076.pdf?arnumber=8701076

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. High Frequency Devices for Next Generation High-Capacity and High Speed Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01

3. Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology;IEEE Microwave and Wireless Components Letters;2022-06

5. Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs;IEEE Transactions on Terahertz Science and Technology;2021-11

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