Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands-Reference-Cited by-同舟云学术

Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands

Published:2023-10-16 Issue: Volume: Page:
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Container-title:2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Gauthier A.¹,Brezza E.¹,Montagné A.¹,Guitard N.¹,Goncalves J. Azevedo¹,Buczko M.¹,Jan S.¹,Derrier N.¹,Céli D.¹,Deglise-Favre C.¹,Ma J.¹,Audouin H.¹,Deprat F.¹,Ristoiu I D.¹,Berthier L.¹,Clément L.¹,Grelaud B.¹,Rougier C.²,Chevalier P.¹

Affiliation:

1. STMicroelectronics,Crolles Cedex,France,38926

2. STMicroelectronics, iXcampus,Saint-Germain-en-Laye,France,78100

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310961.pdf?arnumber=10310961

Reference18 articles.

1. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

2. Integration of SiGe HBT with fr = 305GHz, fMAX = 537GHz in 130nm and 90nm CMOS;manger;IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium,2018

3. Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with f_T/f_max of 340/410 GHz

4. SiGe HBT / CMOS process thermal budget co-optimization in a 55-nm CMOS node

5. SiGe HBT withfTI fMAX of 505 GHz / 720 GHz;heinemann;IEDM Technical Digest,0

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