A 170GHz 5.5dB NF Low-Noise Amplifier in 55nm SiGe BiCMOS
Author:
Affiliation:
1. University of Pavia,Department of Electrical, Computer and Biomedical Engineering,Italy
2. STMicroelectronics,Milan,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10559643/10559661/10559706.pdf?arnumber=10559706
Reference17 articles.
1. A compact ultra-wideband mmWave radar sensor at 80 GHz based on a SiGe transceiver chip (Focused session on highly-integrated millimeter-wave radar sensors in SiGe BiCMOS technologies)
2. A novel ultra-wideband 80 GHz FMCW radar system for contactless monitoring of vital signs
3. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
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