A Novel STT-MRAM Cell With Disturbance-Free Read Operation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8919/6519344/06472264.pdf?arnumber=6472264
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel Voltage Based In-Memory Computing Architecture using STT-MRAM;2023 IEEE 8th International Conference for Convergence in Technology (I2CT);2023-04-07
2. High-Reliability, Reconfigurable, and Fully Non-volatile Full-Adder Based on SOT-MTJ for Image Processing Applications;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-02
3. A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction;IEEE Transactions on Magnetics;2022-12
4. Efficient and Highly Reliable Spintronic Non-volatile Quaternary Memory Based on Carbon Nanotube FETs and Multi-TMR MTJs;ECS Journal of Solid State Science and Technology;2022-06-01
5. Progress toward picosecond on-chip magnetic memory;Applied Physics Letters;2022-04-04
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