Efficient and Highly Reliable Spintronic Non-volatile Quaternary Memory Based on Carbon Nanotube FETs and Multi-TMR MTJs

Abstract

Due to the limitations of traditional binary circuits, such as high power consumption and large area and interconnections density, multi-valued logic (MVL) was offered as a solution. Quaternary logic is a form of MVL that is highly compatible with binary systems. This paper proposes a low-cost and highly reliable non-volatile quaternary memory benefiting from the adjustable threshold voltage property of gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET) and non-volatile nature of magnetic tunnel junctions (MTJ). The proposed quaternary memory occupies less area and consumes lower power. The simulation results show that the proposed design offers up to 53%, 41%, and 69% lower average power, static power, and write power. Moreover, it offers up to 47% and 34% lower read power delay product (PDP) and write PDP, respectively. The proposed latch also occupies up to 23% lower area than the state-of-the-art non-volatile quaternary memories.