Performance and Variability-Aware SRAM Design for Gate-All-Around Nanosheets and Benchmark with FinFETs at 3nm Technology Node-Reference-Cited by-同舟云学术

Performance and Variability-Aware SRAM Design for Gate-All-Around Nanosheets and Benchmark with FinFETs at 3nm Technology Node

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Rzepa Gerhard¹,Bhuwalka Krishna K.²,Baumgartner Oskar¹,Leonelli Daniele²,Karner Hui-Wen¹,Schanovsky Franz¹,Kernstock Christian¹,Stanojevic Zlatan¹,Wu Hao²,Benistant Francis³,Liu Changze²,Karner Markus¹

Affiliation:

1. Global TCAD Solutions,Vienna,Austria

2. Huawei Technologies R&D Belguim N.V.,Leuven,Belgium

3. HiSilicon Technologies,Shenzhen,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019528.pdf?arnumber=10019528

Reference19 articles.

1. Spatial variation of the work function in nano-crystalline TiN films measured by dual-mode scanning tunneling microscopy

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