First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size-Reference-Cited by-同舟云学术

First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Seo Soo Man¹,Aikawa Hisanori²,Kim Soo Gil¹,Nagase Toshihiko²,Ito Yuich²,Ha Tae Jung¹,Yoshino Kenichi²,Jung Bo Kyung¹,Oikawa Tadaaki²,Jung Ku Youl¹,Moon Hyun In¹,Kim Bum Su¹,Matsuoka Fumiyoshi³,Hatsuda Kosuke³,Hoya Katsuhiko³,Kim Seiyon¹,Lee Sung-Hoon¹,Na Myung-Hee¹,Cha Seon Yong¹

Affiliation:

1. SK hynix Inc.,Icheon,Korea

2. Kioxia Korea Corporation,Seoul,Korea

3. Kioxia Corporation,Yokohama,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019549.pdf?arnumber=10019549

Reference19 articles.

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local bandgap narrowing in the forming state of threshold switching materials;Applied Physics Letters;2024-07-08

2. Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling;Micromachines;2024-04-26

3. Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Demonstration of Threshold Switching in Undoped SiO _x Layer for Oscillation Neurons;IEEE Transactions on Electron Devices;2024-03

5. Pitch Scaling Prospect of Ultra-Small Magnetic Tunnel Junctions for High-Density STT-MRAM: Effects of Magnetostatic Interference From Neighboring Bits;IEEE Electron Device Letters;2024-02