Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAM
Author:
Affiliation:
1. Institute of Memory Technology R&D, Kioxia Corporation,Yokohama,Japan
2. Graduate School of Engineering, Mie University,Tsu,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529458.pdf?arnumber=10529458
Reference20 articles.
1. Spin transfer switching in TbCoFe∕CoFeB∕MgO∕CoFeB∕TbCoFe magnetic tunnel junctions with perpendicular magnetic anisotropy
2. Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM
3. Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU
4. 4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure
5. First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size
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