A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications-Reference-Cited by-同舟云学术

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A low store energy, low VDDmin, nonvolatile 8T2R SRAM with 3D stacked RRAM devices for low power mobile applications

Published:2010-06 Issue: Volume: Page:
ISSN:
Container-title:2010 Symposium on VLSI Circuits
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Author:

Chiu Pi-Feng,Chang Meng-Fan,Sheu Shyh-Shyuan,Lin Ku-Feng,Chiang Pei-Chia,Wu Che-Wei,Lin Wen-Pin,Lin Chih-He,Hsu Ching-Chih,Chen Frederick T.,Su Keng-Li,Kao Ming-Jer,Tsai Ming-Jinn

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5552635/5560242/05560286.pdf?arnumber=5560286

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Capacitance FET 8T SRAM Computing in-Memory based Logic Design for Energy Efficient AI Edge Devices;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Computing in-memory reconfigurable (accurate/approximate) adder design with negative capacitance FET 6T-SRAM for energy efficient AI edge devices;Semiconductor Science and Technology;2024-03-21

3. SweepCache: Intermittence-Aware Cache on the Cheap;56th Annual IEEE/ACM International Symposium on Microarchitecture;2023-10-28

4. A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design;Micromachines;2022-10-22

5. Enabling In-Memory Computations in Non-Volatile SRAM Designs;IEEE Journal on Emerging and Selected Topics in Circuits and Systems;2022-06

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