0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band-Reference-Cited by-同舟云学术

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0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

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Container-title:Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
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Author:

Grundbacher R.,Lai R.,Barsky M.,Tsai R.,Gaier T.,Weinreb S.,Dawson D.,Bautista J.J.,Davis J.F.,Erickson N.,Block T.,Oki A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7912/21817/01014466.pdf?arnumber=1014466

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Differential BroadBand (1–16 GHz) MMIC GaAs mHEMT Low-Noise Amplifier for Radio Astronomy Applications and Sensing;Sensors;2024-05-15

2. Design and realization of THz InAlAs/InGaAs InP-based PHEMTs;J INFRARED MILLIM W;2018

3. Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs;Journal of Semiconductors;2015-08

4. Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz;Journal of Semiconductors;2015-02

5. Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications;IEICE Electronics Express;2015

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