Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz-Reference-Cited by-同舟云学术

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Design of InAlAs/InGaAs PHEMTs and small-signal modeling from 0.5 to 110 GHz

Published:2015-02 Issue:2 Volume:36 Page:024005
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Zhiming,Lü Xin,Luo Xiaobin,Cui Yuxing,Sun Xiguo,Mo Jianghui,Fu Xingchang,Li Liang,He Dawei

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=2/a=024005/pdf

Reference15 articles.

1. 220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications

2. 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

3. 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

4. THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications;Micromachines;2021-11-30

2. fT= 260 GHz andfmax= 607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs withGm.max= 1441 mS/mm;Journal of Semiconductors;2016-07

3. Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs;Journal of Semiconductors;2015-08

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