Realization of 70-nm T-gate InP-based PHEMT for MMW low noise applications
Author:
Affiliation:
1. Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology
2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/elex/12/3/12_12.20141174/_pdf
Reference15 articles.
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