Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents-Reference-Cited by-同舟云学术

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents

Published:2022-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Memory Workshop (IMW)
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Author:

Pesic Milan¹,Padovani Andrea¹,Rollo Tommaso¹,Beltrando Bastien¹,Strand Jack²,Agrawal Parnika¹,Shluger Alexander²,Larcher Luca¹

Affiliation:

1. Applied Materials Inc.,Santa Clara,CA,USA

2. University College London,Department of Physics and Astronomy,London,UK

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779245.pdf?arnumber=9779245

Reference9 articles.

1. Application and Benefits of Target Programming Algorithms for Ferroelectric Hf02 Transistors;zhou;2020 IEEE International Electron Devices Meeting (IEDM),0

2. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

3. Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND

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