Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability-Reference-Cited by-同舟云学术

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Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability

Published:2019-03 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Karmel Kranthi Nagothu,Sampath Kumar B.,Salman Akram,Boselli Gianluca,Shrivastava Mayank

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8712125/8720395/08720580.pdf?arnumber=8720580

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Impact of a Deep Junction Coupled with a Short Channel Length on the ESD Robustness of a Grounded Gate NMOS Clamp;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02

4. Current Scalability Issues in Multi-Bank 5V PMOS ESD structures: Root cause and Design Guideline;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Unique Rise Time Sensitivity Leading to Air Discharge System-Level ESD Failures in Bidirectional High Voltage SCRs;IEEE Transactions on Electron Devices;2022-05

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