Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues

Author:

Treu Michael,Rupp Roland,Solkner Gerald

Publisher

IEEE

Cited by 39 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Laser doping mechanism of 4H-SiC by KrF excimer laser irradiation using SiNx thin films;Japanese Journal of Applied Physics;2023-01-26

2. Degradation Mechanism and Failure Analysis of Planar Type SiC MOSFETs Under Cyclic Stress of Surge Current;2022 13th International Conference on Reliability, Maintainability, and Safety (ICRMS);2022-08-21

3. The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes;IEEE Transactions on Electron Devices;2022-03

4. Review of Silicon Carbide Processing for Power MOSFET;Crystals;2022-02-11

5. Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02

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