Degradation Mechanism and Failure Analysis of Planar Type SiC MOSFETs Under Cyclic Stress of Surge Current-Reference-Cited by-同舟云学术

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Degradation Mechanism and Failure Analysis of Planar Type SiC MOSFETs Under Cyclic Stress of Surge Current

Published:2022-08-21 Issue: Volume: Page:
ISSN:
Container-title:2022 13th International Conference on Reliability, Maintainability, and Safety (ICRMS)
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Author:

Lin Yihang¹,Chen Y. Q.²,Geng Kuiwei¹,Hou Bo²

Affiliation:

1. School of Microelectronics, South China University of Technology,Guangzhou,China,511442

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry andInformation Technology Guangzhou,Guangzhou,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9944388/9944547/09944567.pdf?arnumber=9944567

Reference17 articles.

1. Failure of Switching Operation of SiC-MOSFETs and Effects of Stacking Faults on Safe Operation Area[J];ryusei;IEEE Transactions on Electron Devices,2018

2. Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by V SD - Method[C];hoffmann;2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) IEEE,0

3. Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling

4. Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode

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