The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-SiC MPS Diodes
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University, Hangzhou, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9722602/09716866.pdf?arnumber=9716866
Reference27 articles.
1. Avalanche robustness of SiC MPS diodes;basler;Proc PCIM Eur Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage (VDE),2016
2. 1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability
3. A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations
4. Design and Experimental Study of 4H-SiC Trenched Junction Barrier Schottky Diodes
5. Influence of the Design of Square p+ Islands on the Characteristics of 4H-SiC JBS
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3. Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs;IEEE Transactions on Electron Devices;2024-03
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