Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129286.pdf?arnumber=9129286
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2023-12
2. Improvement of Surge Current Capability of 3.3 kV SBD-Embedded SiC-MOSFET Module;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
3. Comparative study on short-circuit and surge current capabilities of 1.2 kV SiC SBD-embedded MOSFETs;Japanese Journal of Applied Physics;2023-02-20
4. Study on enhancing of the surge current capabilities of embedded SBDs in SWITCH-MOSs and body-PiN-diodes in SiC trench MOSFETs;Japanese Journal of Applied Physics;2022-12-23
5. Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
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