Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes-Reference-Cited by-同舟云学术

Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes

Published:2022-05-22 Issue: Volume: Page:
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Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Palanisamy Shanmuganathan¹,Basler Thomas¹,Liu Xing¹,Herrmann Clemens¹,Elpelt Rudolf²,Sochor Paul²

Affiliation:

1. Technische Universität Chemnitz,Chair of Power Electronics and EMC,Chemnitz,Germany

2. Infineon Technologies AG,Neubiberg,Germany

Publisher

IEEE

Link

Reference12 articles.

1. High dynamic stress on SiC trench mosfet body diodes and their behaviour;märz;PCIM Europe,2018

2. Understanding the Turn-off Behavior of SiC MOSFET Body Diodes in Fast Switching Applications;sochor;PCIM Europe,2021

4. Investigation of 1.2 kV SiC MOSFETs for hard- and soft-switching converters;awwad;16th Eur Conf Power Electron Appl EPE-ECCE Eur,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. The Impact of the Dead-Time on the Reverse Recovery Behavior of SiC-MOSFET Body Diodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28