Scalable Test System for Long Term Reliability Assessment of SiC MOSFET Stability in Extreme dV/dt Stress Conditions-Reference-Cited by-同舟云学术

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Scalable Test System for Long Term Reliability Assessment of SiC MOSFET Stability in Extreme dV/dt Stress Conditions

Published:2023-12-04 Issue: Volume: Page:1-5
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Container-title:2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Zhu Lisi¹,Sheridan David C.²,Chatty Kiran²,Liu Zhan¹,Salemi Arash²,Zhang Jin¹,Bobde Madhur²

Affiliation:

1. Alpha and Omega Semiconductor,Sunnyvale,CA,U.S.A.,94085

2. Alpha and Omega Semiconductor,Shanghai,China,200070

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382196.pdf?arnumber=10382196

Reference9 articles.

1. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

2. Temperature Dependence of dV/dt Impact on the SiC-MOSFET

3. Overcurrent turn-off robustness and stability of the switching behavior of SiC MOSFET body diodes

4. Gate Oxide Degradation of SiC MOSFET in Switching Conditions

5. On Developing a dV/dt Rating for Commercial 650 V-and 1200 V-Rated SiC Schottky Diodes;Wang

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