SPICE modeling of the transient response of irradiated MOSFETs-Reference-Cited by-同舟云学术

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SPICE modeling of the transient response of irradiated MOSFETs

Published:2000-06 Issue:3 Volume:47 Page:508-513
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Pouget V.¹,Lapuyade H.,Lewis D.,Deval Y.,Fouillat P.,Sarger L.

Affiliation:

1. IXL, Bordeaux I Univ., Talence, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/18599/00856472.pdf?arnumber=856472

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rapid detection of radiation susceptible regions in electronics;Journal of Vacuum Science & Technology B;2023-06-08

2. Investigation of Single Event Effects in a Resistive RAM Memory Array by Coupling TCAD and SPICE Simulations;Journal of Electronic Testing;2023-05-25

3. Research on Single Event Transients in Linear Voltage Regulators in a 28 nm Bulk CMOS Technology;IEEE Transactions on Nuclear Science;2023

4. Investigation of Single Event Effects in a Resistive RAM memory array by SPICE level simulation;2021 IEEE 22nd Latin American Test Symposium (LATS);2021-10-27

5. Design of Radiation Hardened Complementary Folded Cascode Amplifier;Materials Today: Proceedings;2020

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