Rapid detection of radiation susceptible regions in electronics

Author:

Stepanoff Sergei P.12ORCID,Haque Aman3ORCID,Ren Fan4ORCID,Pearton Stephen5ORCID,Wolfe Douglas E.1267ORCID

Affiliation:

1. Materials Science and Engineering Department, The Pennsylvania State University 1 , University Park, Pennsylvania 16802

2. Applied Research Laboratory, The Pennsylvania State University 2 , University Park, Pennsylvania 16802

3. Mechanical Engineering, The Pennsylvania State University 3 , University Park, Pennsylvania 16802

4. Chemical Engineering, University of Florida 4 , Gainesville, Florida 32611

5. Material Science and Engineering, University of Florida 5 , Gainesville, Florida 32611

6. Engineering Science and Mechanics Department, The Pennsylvania State University 6 , University Park, Pennsylvania 16802

7. Ken and Mary Alice Lindquist Nuclear Engineering Department, The Pennsylvania State University 7 , University Park, Pennsylvania 16802

Abstract

Radiation susceptibility of electronics has always been about probing electrical properties in either transient or time-accumulated phenomena. As the size and complexity of electronic chips or systems increase, detection of the most vulnerable regions becomes more time consuming and challenging. In this study, we hypothesize that localized mechanical stress, if overlapping electrically sensitive regions, can make electronic devices more susceptible to radiation. Accordingly, we develop an indirect technique to map mechanical and electrical hotspots to identify radiation-susceptible regions of the operational amplifier AD844 to ionizing radiation. Mechanical susceptibility is measured using pulsed thermal phase analysis via lock-in thermography and electrical biasing is used to identify electrically relevant regions. A composite score of electrical and mechanical sensitivity was constructed to serve as a metric for ionizing radiation susceptibility. Experimental results, compared against the literature, indicate effectiveness of the new technique in the rapid detection of radiation-vulnerable regions. The findings could be attractive for larger systems, for which traditional analysis would take —two to three orders of magnitude more time to complete. However, the indirect nature of the technique makes the study more approximate and in need for more consistency and validation efforts.

Funder

Defense Threat Reduction Agency

National Science Foundation

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics;ECS Journal of Solid State Science and Technology;2024-06-03

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