Improved low temperature characteristics of P-channel MOSFETs with Si/sub 1-x/Ge/sub x/ raised source and drain-Reference-Cited by-同舟云学术

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Improved low temperature characteristics of P-channel MOSFETs with Si/sub 1-x/Ge/sub x/ raised source and drain

Published:2001 Issue:8 Volume:48 Page:1627-1632
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsiang-Jen Huang ,Kun-Ming Chen ,Tiao-Yuan Huang ,Tien-Sheng Chao ,Guo-Wei Huang ,Chao-Hsin Chien ,Chun-Yen Chang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/20271/00936576.pdf?arnumber=936576

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study;Journal of Nanomaterials;2012

2. Strained-Si nMOSFET with a raised source/drain structure;Semiconductor Science and Technology;2008-12-15

3. Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy;Solid-State Electronics;2005-04

4. Silicon Germanium Strained Layers and Heterostructures;Physica Scripta;2004-01-01

5. Nickel silicidation techniques for strained Si1−xGex, Si1−x−yGexCy, and Si1−yCy alloys material-device applications;Journal of Electronic Materials;2003-03

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