RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon Substrate-Reference-Cited by-同舟云学术

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RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon Substrate

Published:2008-07 Issue:7 Volume:55 Page:1664-1671
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lederer Dimitri,Raskin Jean-Pierre

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4545026/04545040.pdf?arnumber=4545040

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. C-V measurement and modeling of double-BOX Trap-Rich SOI substrate;Solid-State Electronics;2023-11

3. High Resistivity Trap-Rich Substrate for RF MEMS Switches;2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP);2023-05-28

4. The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss;Micromachines;2023-02-28

5. Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator;ECS Journal of Solid State Science and Technology;2023-02-01

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