Funder
University of Chinese Academy of Sciences
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. RF performance of a commercial SOI technology transferred onto a passivated HR silicon substrate;Lederer;IEEE Trans Electron Devices,2008
2. RF harmonic distortion of CPW lines on HR-Si and trap-rich HR-Si substrates;Roda Neve;IEEE Trans Electron Devices,2012
3. Modeling of semiconductor substrates for RF applications: Part II—Parameter impact on harmonic distortion;Rack;IEEE Trans Electron Devices,2021
4. Double buried oxide trap-rich substrates for high frequency applications;Nabet;IEEE Electron Device Lett,2023
5. M. Ke, P. Cheng, K. Kato, M. Takenaka and S. Takagi, “Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces,” 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2018, pp. 34.3.1-34.3.4, doi: 10.1109/IEDM.2018.8614529.