Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers-Reference-Cited by-同舟云学术

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Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers

Published:2008-08 Issue:8 Volume:55 Page:1857-1863
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Lin,Chow T. Paul

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4578833/04578906.pdf?arnumber=4578906

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel design and modelling of SiC junction barrier Schottky diode with improved Baliga FOM under high-temperature applications;Microelectronics Journal;2024-09

2. A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism;Solid State Phenomena;2024-08-23

3. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode;Results in Physics;2024-07

4. Imaging of Magnetic Field Gradient around a Current Path by Alternating Magnetic Force Microscopy;IEEJ Transactions on Sensors and Micromachines;2024-04-01

5. Analysis on abnormal forward conduction properties in GaN based JBS diode by TCAD simulation;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

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