Forward Body Biasing as a Bulk-Si CMOS Technology Scaling Strategy-Reference-Cited by-同舟云学术

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Forward Body Biasing as a Bulk-Si CMOS Technology Scaling Strategy

Published:2008-10 Issue:10 Volume:55 Page:2657-2664
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hokazono A.,Balasubramanian S.,Ishimaru K.,Ishiuchi H.,Hu C.,Liu T.-J.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4631377/04631378.pdf?arnumber=4631378

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Body Biasing Techniques for Dynamic Comparators: A Systematic Survey;Electronics;2024-02-09

2. Cryogenic-Aware Forward Body Biasing in Bulk CMOS;IEEE Electron Device Letters;2024-02

3. Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs;IEEE Transactions on Electron Devices;2023-12

4. FDSOI-Based Analog Computing for Ultra-Efficient Hamming Distance Similarity Calculation;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-07

5. Robust Body Biasing Techniques for Dynamic Comparators;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

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