Author:
Khakifirooz Ali,Antoniadis Dimitri A.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
46 articles.
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1. Influence of gate-source/drain overlap on FeFETs;Solid-State Electronics;2024-04
2. Design and Analysis of Dielectric Materials on Gate All Around Tunnel Field Effect Transistor;2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI);2023-04-19
3. Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09
4. Regression Analysis of Static Noise Margin and Transconductance for Underlap Lengths of FinFET;2022 45th International Spring Seminar on Electronics Technology (ISSE);2022-05-11
5. Effect of Metal Gate Work Function Variation on Underlap FinFET;2022 45th International Spring Seminar on Electronics Technology (ISSE);2022-05-11