Analysis of SEU effects in MOSFET and FinFET based 6T SRAM Cells
Author:
Affiliation:
1. HSE MIEM,School of Electronic Engineering,Moscow,Russia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9802078/9801892/09802398.pdf?arnumber=9802398
Reference24 articles.
1. Modeling of radiation-induced single event transients in SOI FinFETS
2. Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies
3. Active Radiation-Hardening Strategy in Bulk FinFETs
4. Single-Event Upsets in a 7-nm Bulk FinFET Technology With Analysis of Threshold Voltage Dependence
5. The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset;Micromachines;2024-01-29
2. Higher NMOS Single Event Transient Susceptibility Compared to PMOS in Sub-20nm Bulk FinFET;IEEE Electron Device Letters;2023-10
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