Modeling of radiation-induced single event transients in SOI FinFETS-Reference-Cited by-同舟云学术

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Modeling of radiation-induced single event transients in SOI FinFETS

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Artola L.,Hubert G.,Schrimpf R. D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6523362/6531927/06532108.pdf?arnumber=6532108

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design;Electronics;2023-07-24

2. Influence of the STI on Single-Event Transients in Bulk FinFETs;IEEE Transactions on Nuclear Science;2023-05

3. Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains;Chinese Physics B;2023-04-01

4. TCAD Modeling of Nanoscale FinFET Structures on Bulk Silicon, Taking into Account the Effects of Radiation;Russian Microelectronics;2022-12

5. Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity;Radiation Effects and Defects in Solids;2022-10-18

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