Design and Analysis of Dielectric Materials on Gate All Around Tunnel Field Effect Transistor-Reference-Cited by-同舟云学术

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Design and Analysis of Dielectric Materials on Gate All Around Tunnel Field Effect Transistor

Published:2023-04-19 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI)
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Author:

Kumar Nithin NR¹,Bale Ajay Sudhir¹,S Jayanth¹,Kumar Kotapothula Anil¹,Shivakumar Karthik¹,Hari Raghavendra Kotha Venkata¹

Affiliation:

1. New Horizon College of Engineering,Department of Electronics and Communication Engineering,Bengaluru,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10133933/10133939/10133950.pdf?arnumber=10133950

Reference23 articles.

1. A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications;ke;Micromachines,2020

2. Review of Tunnel Field Effect Transistor (TFET);satish;Int J App Eng Res,2023

3. Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

4. Investigation of Negative Capacitance Gate-All-around Tunnel FETs Combining Numerical Simulation and Analytical Modeling;chunsheng;IEEE Transactions on Nanotechnology Institute of Electrical and Electronics Engineers (IEEE),2016

5. Tunnel Field-Effect Transistors as Energy-Efficient Electronic Switches;ionescu;Nature,2011

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