Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior-Reference-Cited by-同舟云学术

Z‐shaped gate TFET with horizontal pocket for improvement of electrostatic behavior

Published:2020-09-10 Issue:1 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model El

Author:

Sahoo Sasmita¹,Dash Sidhartha¹,Routray Soumya Ranjan²,Mishra Guru Prasad³^ORCID

Affiliation:

1. Department of Electronics & Communication Engineering Institute of Technical Education & Research, Siksha 'O' Anusandhan deemed to be University Bhubaneswar India

2. Department of Electronics & Communication Engineering SRM Institute of Science and Technology Chennai India

3. Department of Electronics & Communication Engineering National Institute Technology Raipur Raipur India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2808

Reference42 articles.

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2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Device and Architecture Outlook for Beyond CMOS Switches

4. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

5. KrishnamohanT KimD RaghunathanS SaraswatK. Double gate Strained‐Ge heterostructure tunneling FET (TFET) with record high drive currents and < 60mv/dec subthreshold slope.Proc. IEDM Tech. Dig. 2008;947‐949.https://doi.org/10.1109/IEDM.2008.4796839

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