High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide-Reference-Cited by-同舟云学术

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide

Published:2017-11 Issue:11 Volume:64 Page:8962-8970
ISSN:0278-0046
Container-title:IEEE Transactions on Industrial Electronics
language:
Short-container-title:IEEE Trans. Ind. Electron.

Author:

Soler Victor,Cabello Maria,Berthou Maxime,Montserrat Josep,Rebollo Jose,Godignon Philippe,Mihaila Andrei,Rogina Maria R.,Rodriguez Alberto,Sebastian Javier

Funder

SPEED FP7 Large Project

Spanish Ministry of “Economía y Competitividad” HiVolt-Tech

EU-ERDF (FEDER)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/41/8062949/07968463.pdf?arnumber=7968463

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