Memristive Devices for Time Domain Compute-in-Memory-Reference-Cited by-同舟云学术

Memristive Devices for Time Domain Compute-in-Memory

Published:2022-12 Issue:2 Volume:8 Page:119-127
ISSN:2329-9231
Container-title:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
language:
Short-container-title:IEEE J. Explor. Solid-State Comput. Devices Circuits

Author:

Freye Florian¹^ORCID,Lou Jie¹^ORCID,Bengel Christopher²^ORCID,Menzel Stephan³^ORCID,Wiefels Stefan³^ORCID,Gemmeke Tobias¹^ORCID

Affiliation:

1. Chair of Integrated Digital Systems and Circuit Design, RWTH Aachen University, Aachen, Germany

2. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Aachen, Germany

3. Forschungszentrum Jülich GmbH, Peter Gruenberg Institut (PGI-7), Jülich, Germany

Funder

Federal Ministry of Education and Research (BMBF) through the NEUROTEC Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/6570653/9969523/09930136.pdf?arnumber=9930136

Reference52 articles.

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4. Analytic Model for Statistical State Instability and Retention Behaviors of Filamentary Analog RRAM Array and Its Applications in Design of Neural Network

5. Log-Normal Statistics in Filamentary RRAM Devices and Related Systems

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4. An Energy Efficient All-Digital Time-Domain Compute-in-Memory Macro Optimized for Binary Neural Networks;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01

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