Short channel MOSFET model using a universal channel depletion width parameter
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/18259/00842962.pdf?arnumber=842962
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Triple Metal Surrounding Gate Junctionless Tunnel FET Based 6T SRAM Design for Low Leakage Memory System;Silicon;2021-04-01
2. Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-08-06
3. Channel Length Scaling Pattern for Cylindrical Surrounding Double-Gate (CSDG) MOSFET;IEEE Access;2020
4. Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects;IEEE Transactions on Nanotechnology;2019
5. Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs;Superlattices and Microstructures;2017-06
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