Author:
Goel Ekta,Kumar Sanjay,Singh Balraj,Singh Kunal,Jit Satyabrata
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference32 articles.
1. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Lett. EDL,1987
2. Monte Carlo Simulation of a 30 nm Dual-gate MOSFET: How Short Can Si Go?, Electron Devices Meeting;Frank,1992
3. Ultrafast operation of Vth-adjusted p+-n+ double-gate SOI MOSFET's;Tanaka;IEEE Electron Device Lett.,1994
4. Self-aligned (Top and Bottom) Double-gate MOSFET with a 25 nm Thick Silicon Channel, Electron Devices Meeting;Wong,1997
5. Multiple-gate SOI MOSFETs;Colinge;Solid-State Electron.,2004
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献