PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications-Reference-Cited by-同舟云学术

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PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications

Published:2021 Issue: Volume:9 Page:140975-140982
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Kim Dongsu^ORCID,Heo Su Jin,Pyo Goeun,Choi Hong Soo^ORCID,Kwon Hyuk-Jun^ORCID,Jang Jae Eun^ORCID

Funder

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/6287639/9312710/09568914.pdf?arnumber=9568914

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulse program for improving learning accuracy and reducing programming energy consumption of ferroelectric synaptic transistor;Current Applied Physics;2024-11

2. Flexible multi-electrode neural probe using active-matrix design of transistor array;Sensors and Actuators A: Physical;2024-07

3. Low‐Temperature Nanosecond Laser Process of HZO‐IGZO FeFETs toward Monolithic 3D System on Chip Integration;Advanced Science;2024-05-13

4. Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges;Applied Physics Letters;2024-01-15

5. Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors;ACS Applied Electronic Materials;2024-01-13

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