GRNN-Based Scattering Parameter Modeling Investigation for HBT at Different Temperature
Author:
Affiliation:
1. School of Physics and Electronic Information Engineering, Qinghai Minzu University, Xining, China
2. Chengdu Ganide Technology, Chengdu, China
Funder
National Natural Science Foundation
Key Research and Development and Transformation Project of Qinghai Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10103530.pdf?arnumber=10103530
Reference25 articles.
1. Artificial Neural Networks for Microwave Computer-Aided Design: The State of the Art
2. Extrapolation of Load-Pull Data: A Novel Use of GAN Artificial Intelligence Image Completion
3. A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling
4. Artificial Neural Network Model of SOS-MOSFETs Based on Dynamic Large-Signal Measurements
5. Multi-bias Small-signal Modelling of Microwave Transistors Using PSO-BP Neural Network
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