Electrostatically-Doped Hetero-Barrier Tunnel Field Effect Transistor: Design and Investigation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/8274985/08501540.pdf?arnumber=8501540
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor;ACS Applied Bio Materials;2024-06-29
2. Numerical Simulation of Hetero Dielectric Trench Gate JAM Gate-All-Around FET (HDTG-JAM-GAAFET) for Label Free Biosensing Applications;ECS Journal of Solid State Science and Technology;2023-12-01
3. Cold source field-effect transistors: Breaking the 60-mV/decade switching limit at room temperature;Physics Reports;2023-04
4. Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET;Microelectronics Journal;2022-01
5. Pseudo Split Gate In 0 . 53 Ga 0 .47 As/InP Hetero‐Junction Tunnel FET : Design and Analysis;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2020-11-02
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