Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review
Author:
Affiliation:
1. Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen, China
2. Shenzhen SoC Key Laboratory, Shenzhen Institute of Peking University, Shenzhen, China
Funder
funds
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/6287639/10005208/10041137.pdf?arnumber=10041137
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