Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates-Reference-Cited by-同舟云学术

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Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates

Published:2018-05-07 Issue:19 Volume:112 Page:192901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Walters Glen¹,Shekhawat Aniruddh²^ORCID,Rudawski Nicholas G.³,Moghaddam Saeed²,Nishida Toshikazu¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Research Service Centers, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5027516

Reference38 articles.

1. Ferroelectricity in hafnium oxide thin films

2. An extensive study of the influence of dopants on the ferroelectric properties of HfO2

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

5. The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

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1. Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing;Small Methods;2024-05-16

2. Depolarization mitigated in ferroelectric Hf _0.5Zr _0.5O ₂ ultrathin films (< 5 nm) on Si substrate by interface engineering;Journal of Advanced Ceramics;2024-03

3. Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry;The Journal of Physical Chemistry Letters;2024-01-22

4. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07

5. Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf_0.5Zr_0.5O₂‐Based Ferroelectric Capacitors;Advanced Electronic Materials;2023-08-09

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