Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application-Reference-Cited by-同舟云学术

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Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application

Published:2023 Issue: Volume:11 Page:60660-60667
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Park Jongseo¹^ORCID,Choi Kyeong-Keun²^ORCID,An Jehyun¹^ORCID,Kang Bohyeon¹^ORCID,You Hyeonseo¹^ORCID,Hong Giryun¹^ORCID,Ahn Sung-Min¹^ORCID,Baek Rock-Hyun¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

2. National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/10005208/10154031.pdf?arnumber=10154031

Reference42 articles.

1. CMOS image sensor: Process impact on dark current

2. Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

3. A Highly Reliable Back Side Illuminated Pixel against Plasma Induced Damage

4. Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks

5. New development of atomic layer deposition: processes, methods and applications

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