Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science
Link
http://xplorestaging.ieee.org/ielx7/6287639/8274985/08438870.pdf?arnumber=8438870
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 220-GHz InP DHBT power amplifier designed by adaptive impedance inner-stage matching (AIISM) technique;Infrared Physics & Technology;2024-03
2. A 33∼170 GHz cascode amplifier based on InP DHBT technology;J INFRARED MILLIM W;2023
3. Sub-THz Small-Signal Equivalent Circuit Model and Parameter Extraction for 3 nm Gate-All-Around Nanosheet Transistor;Processes;2022-06-16
4. A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process;Electronics;2021-07-11
5. A complete small-signal HBT model including AC current crowding effect;Journal of Semiconductors;2021-05-01
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