Abstract
This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm2, including DC and RF pads.
Funder
National Natural Science Foundation of China
Science and Technology Innovation Action Plan of Shanghai
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
1 articles.
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1. A Practical Design of Common Emitter Amplifier with Swamping Resistance and Bypass Capacitor;Proceedings of the First Mandalika International Multi-Conference on Science and Engineering 2022, MIMSE 2022 (Mechanical and Electrical);2022-12-22