A Fully-Integrated 40–222 GHz InP HBT Distributed Amplifier-Reference-Cited by-同舟云学术

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A Fully-Integrated 40–222 GHz InP HBT Distributed Amplifier

Published:2014-07 Issue:7 Volume:24 Page:460-462
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Yoon Sangwoo,Lee Iljin,Urteaga Miguel,Kim Moonil,Jeon Sanggeun

Funder

Ministry of Science, ICT & Future Planning (MSIP), Korea in the ICT R&D Program 2013 and Samsung Electronics Company, Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/6840864/06827233.pdf?arnumber=6827233

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 10–230-GHz InP Distributed Amplifier Using Darlington Quadruple-Stacked HBTs;IEEE Microwave and Wireless Technology Letters;2024-06

2. A 182 GHz Triple-Stacked Distributed Amplifier in InP HBT Process;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. A 7–115-GHz Distributed Amplifier With 24-dBm Output Power Using Quadruple-Stacked HBT in InP;IEEE Microwave and Wireless Technology Letters;2023-06

4. A Balanced Darlington Cell for a 3–230-GHz InP Distributed Amplifier;IEEE Transactions on Microwave Theory and Techniques;2023

5. Accurate Design Method for Millimeter Wave Distributed Amplifier Based on Four-Port Chain (ABCD) Matrix Model;IEEE Transactions on Circuits and Systems I: Regular Papers;2022-11

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