Effect of ALD Processes on Physical and Electrical Properties of HfO<sub>2</sub> Dielectrics for the Surface Passivation of a CMOS Image Sensor Application-Reference-Cited by-同舟云学术

Effect of ALD Processes on Physical and Electrical Properties of HfO₂ Dielectrics for the Surface Passivation of a CMOS Image Sensor Application

Published:2022 Issue: Volume:10 Page:68724-68730
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Kim Honggyun¹,Chavan Vijay D.¹^ORCID,Aziz Jamal¹^ORCID,Ko Byoungsu²,Lee Jae-Sung³^ORCID,Rho Junsuk²^ORCID,Dongale Tukaram D.⁴,Choi Kyeong-Keun⁵^ORCID,Kim Deok-Kee¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Sejong University, Seoul, South Korea

2. Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, South Korea

3. Department of Renewable Energy Engineering, Uiduk University, Gyeongju, South Korea

4. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, India

5. National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Pohang, Gyeongbuk, South Korea

Funder

Korean Government (MOTIE) and Korea Evaluation Institute of Industrial Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/6287639/9668973/09797717.pdf?arnumber=9797717

Reference36 articles.

1. Optical Measurement Techniques of Recombination Lifetime Based on the Free Carriers Absorption Effect

2. Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes

3. Numerical solution of initial boundary value problems involving Maxwell’s equations in isotropic media;yee;IEEE Trans Antennas Propag,1966

4. Silicon surface passivation using thin HfO2 films by atomic layer deposition

5. Al/HfO2/Si Gate Stack with Improved Physical and Electrical Parameters

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled charge transport in ZrO2 and its bilayer structures for low-power memory;Journal of Alloys and Compounds;2024-10

2. In-situ temperature-dependent sheet resistance study of Cu films in oxygen ambient for heterogeneous integrations;Nanotechnology;2024-02-02

3. Effect of mechanical stress on the traps in silicon nitride thin films;Current Applied Physics;2024-01

4. Cost-Effective and Environmentally Friendly Mass Manufacturing of Optical Metasurfaces Towards Practical Applications and Commercialization;International Journal of Precision Engineering and Manufacturing-Green Technology;2023-11-28

5. Improved memory performance of ALD grown HfO2 films by nitrogen doping;Materials Science and Engineering: B;2023-11