Silicon surface passivation using thin HfO2 films by atomic layer deposition-Reference-Cited by-同舟云学术

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Silicon surface passivation using thin HfO2 films by atomic layer deposition

Published:2015-12 Issue: Volume:357 Page:635-642
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Gope Jhuma,Vandana ,Batra Neha,Panigrahi Jagannath,Singh Rajbir,Maurya K.K.,Srivastava Ritu,Singh P.K.

Funder

CSIR project NWP55

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. Surface passivation of crystalline silicon solar cells: a review

2. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

3. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

4. Silicon surface passivation by atomic layer deposited Al2O3

5. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

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1. Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection;physica status solidi (RRL) – Rapid Research Letters;2024-08-07

2. Progress in TOPCon solar cell technology: Investigating hafnium oxide through simulation;Current Applied Physics;2024-07

3. From Rigid to Flexible: Progress, Challenges and Prospects of Thin c‐Si Solar Energy Devices;Advanced Energy Materials;2024-05-08

4. Effect of films thickness and hydrogen annealing on passivation performance of plasma ALD based Hafnium oxide films;Physica Scripta;2024-04-23

5. Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon;RSC Applied Interfaces;2024

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