Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT-Reference-Cited by-同舟云学术

Comprehensive Cryogenic Characterizations of a Commercial 650 V GaN HEMT

Published:2021-11-16 Issue: Volume: Page:
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Container-title:2021 IEEE International Future Energy Electronics Conference (IFEEC)
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Author:

Wei Yuqi,Hossain Md Maksudul,Mantooth Alan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661583/9661588/09661762.pdf?arnumber=9661762

Reference14 articles.

1. Characterization of Wide Bandgap Semiconductor Devices for Cryogenically-Cooled Power Electronics in Aircraft Applications;zhang;2018 AIAA/IEEE Electric Aircraft Technologies Symposium (EATS) AIAA/IEEE EATS,2018

2. Characterization of 650 V Enhancement-mode GaN HEMT at Cryogenic Temperatures

3. Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

4. Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures

5. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

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1. Review of semiconductor devices and other power electronics components at cryogenic temperature;iEnergy;2024-06

2. Dynamic Characterization of 650V GaN HEMT Transistors;2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP);2023-11-26

3. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

4. Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature;IEEE Transactions on Industry Applications;2023-03

5. Cryogenic Four-switch Buck-Boost Converter Design for All Electric Aircraft;2022 IEEE Transportation Electrification Conference & Expo (ITEC);2022-06-15