Dynamic Characterization of 650V GaN HEMT Transistors-Reference-Cited by-同舟云学术

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Dynamic Characterization of 650V GaN HEMT Transistors

Published:2023-11-26 Issue: Volume: Page:1-7
ISSN:
Container-title:2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP)
language:
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Author:

Sergentanis Grigorios¹,De Novaes Yales Rômulo²,De Lillo Liliana¹,Empringham Lee¹,Johnson Mark C.¹

Affiliation:

1. University of Nottingham,Faculty of Engineering,Nottingham,UK

2. Santa Catarina State University,Electrical Engineering Department,Joinville,Brazil

Funder

Engineering and Physical Sciences Research Council

CNPq

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10406303/10407110/10407647.pdf?arnumber=10407647

Reference16 articles.

1. GaN Transistors for Efficient Power Conversion

2. Performance Benchmarking of Si and GaN MOSFETs in Isolated Buck-Boost DC-DC Converter

3. Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters

4. A Multifunctional Double Pulse Tester for Cascode GaN Devices

5. SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions

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