An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs
Author:
Affiliation:
1. ZJU-UIUC Institute, Zhejiang University, Haining, China
Funder
National Natural Science Foundation of China
Zhejiang Provincial Natural Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/9939118/09796121.pdf?arnumber=9796121
Reference44 articles.
1. Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs
2. Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Layers
3. Comparison of SOI Versus Bulk FinFET Technologies for 6T-SRAM Voltage Scaling at the 7-/8-nm Node
4. Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability
5. Ambient Temperature-Induced Device Self-Heating Effects on Multi-Fin Si n-FinFET Performance
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